Band gap and electronic structure of an epitaxial, semiconducting Cr0.80Al0.20 thin film.
نویسندگان
چکیده
Cr(1-x)Al(x) exhibits semiconducting behavior for x = 0.15-0.26. This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial Cr(0.80)Al(0.20) thin film show several features in the valence band region, including a gap at the Fermi energy (E(F)) for which the valence band edge is 95 ± 14 meV below E(F). Theory agrees well with the valence band measurements, and shows an incomplete gap at E(F) due to the hole band at M shifting almost below E(F).
منابع مشابه
Electronic Structure Calculations for Cr 1 - xAlx
Cr3Al shows semiconducting behavior that has not been explained previously. We used density functional theory calculations, performed at the Cornell NanoScale Facility to study the effect of chemical ordering and magnetism on the semiconducting behavior. The calculations show that the proposed chemically ordered Cr3Al structure in the Cr1-xAlx phase diagram is the lowest energy structure of tho...
متن کاملTight- binding study of electronic band structure of anisotropic honeycomb lattice
The two-dimensional structure of graphene, consisting of an isotropic hexagonal lattice of carbon atoms, shows fascinating electronic properties, such as a gapless energy band and Dirac fermion behavior of electrons at fermi surface. Anisotropy can be induced in this structure by electrochemical pressure. In this article, by using tight-binding method, we review anisotropy effects in the elect...
متن کاملThe Effect of Tin Weight Fraction and Annealing Condition on Electrical and Optical Properties of ITO/TiO2 Nanostructured Film
High transparent conductive indium tin oxide/titanium dioxide (ITO/TiO2) nanostructured thin film is prepared by sol-gel dip-coating technique. This method yielded monodisperse ITO nanoparticles with mean diameter of 12 nm. The atomic composition of the Sn within the ITO structure changed from 0-20 wt.%. Through controlled annealing temperature at 550 oC, the result...
متن کاملAnisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3
Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo2O5.5+δ films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principl...
متن کاملTailoring the Energy Band Gap of Transition Metal Doped TiO2 Thin Film
Water splitting for hydrogen production under sunlight using TiO2 as photo catalyst provides a better route for solar energy and attracts the attention of many researchers. The photo catalytic activity of TiO2 under sunlight irradiation depends on the band gap energy. The transition metal doped TiO2 shows an edge over TiO2 in optical absorbance and photo catalytic activity. Thin film of Cr dope...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review letters
دوره 105 23 شماره
صفحات -
تاریخ انتشار 2010